SMD PHOTODIODE, 1mm2
NXIR-RF100
FEATURES
• Red to Near Infrared Enhanced Photodiode
• Photosensitive active area: 1mm x 1mm
• High Sensitivity:
0.62A/W (ʎ=850nm), 0.35A/W (ʎ=1064nm)
• Wide Operating Temperature: -40°C TO +125°C
• Ideal for Laser Monitoring Applications
• RoHS and REACH Compliant
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
TEST CONDITIONS
MIN
320
TYP
1
MAX
1100
UNITS
mm2
nm
Spectral Response Range ʎ
Responsivity, R
@ 850nm
.62
.35
A/W
@ 1064nm
A/W
nA
Responsivity, R
Dark Current, Idr
Shunt Resistance
Vr = 3V
0.1
0.75
VR = 10mV
200
50
500
MΩ
Volts
pF
Reverse Breakdown Voltage, VR
Capacitance, C
IR = 1µA
VR = 0V
VR = 5V
3
Rise Time
50
nsec
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-40°C TO 125°C
125°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, FAX: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision March 10, 2017
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