Datasheet > OD-880-C

OD-880-C

更新时间： 2024-11-09 04:12:19

品牌	Logo	应用领域
OPTODIODE		半导体光电
页数	文件大小	规格书
1页	262K
描述
HIGH-POWER GaAlAs IR EMITTER CHIPS

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中文翻译

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数据手册

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OD-880-C 数据手册

HIGH-POWERꢀGaAlAsꢀIRꢀEMITTERꢀCHIPS

OD-880-C

FEATURES

• High reliability LPE GaAlAs IRLED chips

.014

• Graded-bandgap LED structure for high radiant power

output

• 880nm peak emission

• Good ohmic contacts (gold alloys)

• Good bondability

.014

EMITTING

SURFACE

All dimensions are nominal values in inches unless

otherwise specified.

.006

.003

.005

GOLD

CONTACTS

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

I = 100mA

MIN

TYP

MAX

1.9

UNITS

I = 20mA

Peak Emission Wavelength, L

880

I = 50mA

Spectral Bandwidth at 50%, $L

I = 100mA

Forward Voltage, V

1.55

Volts

= 10MA

Reverse Breakdown Voltage, V

Capacitance, C

Rise Time

= 0V

0.5

Msec

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10Ms, 300 Hz)

Reverse Voltage

Storage and Operating Temperature Range

Maximum Junction Temperature

-65°C to 150°C

150°C

The exact performance data depends on your package configuration and technique. Data listed in this specification is

for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days

from the shipment date. Opto Diode must be notified of any discrepancies within this period.

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

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