Datasheet > OD-669-850

OD-669-850

更新时间： 2024-09-27 12:03:51

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	272K
描述
HIGH-POWER GaAlAs IRLED ILLUMINATOR

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OD-669-850 数据手册

HIGH-POWER GaAlAs IRLED ILLUMINATOR

OD-669-850

FEATURES

• Ultra high optical output

• 850nm IR illuminator

• Very uniform optical beam

• Standard 2-lead TO-66 electrically isolated

package

• Ideal for night vision illumination

All surfaces are gold plated. Dimensions are

nominal values in inches unless otherwise

specified.

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

I = 300mA

MIN

800

TYP

1250

850

MAX

16.2

UNITS

Peak Emission Wavelength, λ

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

I = 50mA

120

14.4

Deg

Volts

nsec

Forward Voltage, V

I = 300mA

Reverse Breakdown Voltage, V

Rise Time

= 10μA

200

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

Continuous Forward Current

370mA

Peak Forward Current (10μs, 200Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10 sec)

260°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-40°C to +100°C

100°C

Thermal Resistance, R

THJA

60°C/W Typical

16°C/W Typical

Thermal Resistance, R

THJC

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision June 23, 2013

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