5秒后页面跳转
NZQA6V8XV5T1G PDF预览

NZQA6V8XV5T1G

更新时间: 2024-11-13 03:12:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 118K
描述
Quad Array for ESD Protection

NZQA6V8XV5T1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:1 week风险等级:1.34
最大击穿电压:7.14 V最小击穿电压:6.46 V
击穿电压标称值:6.8 V最大钳位电压:12.5 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100 W元件数量:4
端子数量:5最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

NZQA6V8XV5T1G 数据手册

 浏览型号NZQA6V8XV5T1G的Datasheet PDF文件第2页浏览型号NZQA6V8XV5T1G的Datasheet PDF文件第3页浏览型号NZQA6V8XV5T1G的Datasheet PDF文件第4页 
NZQA5V6XV5T1G Series  
Quad Array for  
ESD Protection  
This quad monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment, and other applications. Its quad junction common  
anode design protects four separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
http://onsemi.com  
SOT553  
CASE 463B  
PLASTIC  
Specification Features  
SOT553 Package Allows Four Separate Unidirectional  
Configurations  
MARKING DIAGRAM  
Low Leakage < 1 mA @ 3 V for NZQA5V6XV5T1G  
Breakdown Voltage: 5.6 V 6.8 V @ 1 mA  
xx MG  
G
ESD Protection Meeting IEC6100042 Level 4  
These are PbFree Devices  
xx = Specific Device Code  
M
G
= Date Code  
= PbFree Package  
Mechanical Characteristics  
(Note: Microdot may be in either location)  
Void Free, TransferMolded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
100% Lead Free, MSL1 @ 260°C Reflow Temperature  
1
2
3
5
4
ORDERING INFORMATION  
Device  
Package  
Shipping  
NZQA5V6XV5T1G SOT553 4000 / Tape & Reel  
(PbFree)  
NZQA5V6XV5T3G SOT553  
(PbFree)  
16000 /  
Tape & Reel  
NZQA6V2XV5T1G SOT553 4000 / Tape & Reel  
(PbFree)  
NZQA6V8XV5T1G SOT553 4000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2007 Rev. 3  
NZQA5V6XV5T1/D  

NZQA6V8XV5T1G 替代型号

型号 品牌 替代类型 描述 数据表
NZQA6V8XV5T2 ONSEMI

完全替代

Transient Voltage Suppressor, Quad Array, SOT-553, 5 LEAD, 4000-REEL
NZQA6V8AXV5T1G ONSEMI

类似代替

Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8AXV5T3G ONSEMI

类似代替

Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage

与NZQA6V8XV5T1G相关器件

型号 品牌 获取价格 描述 数据表
NZQA6V8XV5T2 ONSEMI

获取价格

Transient Voltage Suppressor, Quad Array, SOT-553, 5 LEAD, 4000-REEL
NZT44H8 FAIRCHILD

获取价格

NPN Power Amplifier
NZT44H8 ONSEMI

获取价格

NPN功率放大器
NZT44H8_NL FAIRCHILD

获取价格

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
NZT44H8D84Z FAIRCHILD

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
NZT44H8-D84Z TI

获取价格

8000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261
NZT44H8L99Z FAIRCHILD

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
NZT44H8S62Z FAIRCHILD

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
NZT44H8-S62Z TI

获取价格

8000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261
NZT45C11 FAIRCHILD

获取价格

PNP Current Driver Transistor