NVT4857UK
SD 3.0-SDR104 compliant integrated auto-direction control
memory card voltage level translator with EMI filter and ESD
protection
Rev. 2 — 6 June 2018
Product data sheet
1. General description
The device is an SD 3.0-compliant bidirectional dual voltage level translator with
auto-direction control. It is designed to interface between a memory card operating at
1.8 V or 3.0 V signal levels and a host with a nominal supply voltage of 1.2 V to 1.8 V.
The device supports SD 3.0 SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0
High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has an integrated
voltage selectable low dropout regulator to supply the card-side I/Os, an auto-enable/
disable function connected to the VSD supply pin, built-in EMI filters and robust ESD
protections (IEC 61000-4-2, level 4).
2. Features and benefits
Supports up to 208 MHz clock rate
SD 3.0 specification-compliant voltage translation to support SDR104, SDR50,
DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
1.2 V to 1.8 V host side interface voltage support
Feedback channel for clock synchronization
100 mA Low dropout voltage regulator to supply the card-side I/Os
Low power consumption by push-pull output stage with break-before-make
architecture
Automatic enable and disable through VSD
Integrated pull-up and pull-down resistors: no external resistors required
Integrated EMI filters suppress higher harmonics of digital I/Os
Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on card side
Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
20-ball WLCSP; pitch 0.4 mm
3. Applications
Smart phones
Tablet PCs
Mobile handsets
Digital cameras
Laptop computers
SD, MMC or microSD card readers