Document Number: MRFE6VP5600H
Rev. 1, 1/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
MRFE6VP5600HR6
MRFE6VP5600HSR6
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
•
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
RF POWER MOSFETs
Signal Type
(MHz)
Pulsed (100 μsec,
600 Peak
230
25.0
74.6
-- 1 8
20% Duty Cycle)
CW
600 Avg.
230
24.6
75.2
-- 1 7
•
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
•
CASE 375D--05, STYLE 1
NI--1230
Features
•
•
•
•
•
•
Unmatched Input and Output Allowing Wide Frequency Range Utilization
MRFE6VP5600HR6
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +130
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
RF /V
RF /V
out DS
3
4
1
2
in GS
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
RF /V
out DS
RF /V
in GS
T
C
°C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
1667
8.33
W
W/°C
C
D
(Top View)
(1,2)
Figure 1. Pin Connections
Operating Junction Temperature
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol Value
Unit
Thermal Resistance, Junction to Case
°C/W
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
Z
R
0.022
0.12
θ
JC
θ
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
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