Datasheet > NXIR-RF36

NXIR-RF36

更新时间： 2022-02-26 13:51:16

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	102K
描述
PHOTODIODE, .36mm2

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NXIR-RF36 数据手册

PHOTODIODE, .36mm²

NXIR-RF36

FEATURES

• Near Infrared Reduced Footprint Photodiode

• Photosensitive active area: 0.6mm x 0.6mm

• High Sensitivity: 0.65 A/W (ʎ=850nm)

• Wide Operating Temperature: -40°C TO +110°C

• Ideal for High Volume Laser Monitoring Applications

• RoHS and REACH Compliant

Dimensions are in inch [metric] units

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Active Area

TEST CONDITIONS

MIN

TYP

.36

MAX

0.3

UNITS

mm²

A/W

@ 850nm

Vr = 3V

.65

Responsivity, R

Dark Current, Idr

Shunt Resistance

0.05

1000

V_R= 10mV

200

MΩ

Volts

Reverse Breakdown Voltage, V_R

Capacitance, C

I_R= 10µA

V_R= 0V

Rise Time

V_R= 10V

nsec

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-40°C TO 110°C

110°C

1260 Calle Suerte, Camarillo, California 93012

Phone: (805) 499-0335, FAX: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision December 7, 2016

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