Datasheet > NXH007F120M3F2PTHG

NXH007F120M3F2PTHG

更新时间： 2024-11-21 17:00:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	497K
描述
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK?Full Bridge Topology, F2 Package

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC, 7 mohm,

1200 V, SiC M3S MOSFET,

Full Bridge, F2 Package

PIM34 56.7x42.5 (PRESS FIT)

CASE 180HU

Product Preview

NXH007F120M3F2PTHG

MARKING DIAGRAM

The NXH007F120M3F2PTHG is a power module containing

7 mWĂ/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS

DBC in an F2 package.

NXH007F120M3F2PTHG

ATYYWW

Features

NXH007F120M3F2PTHG = Specific Device Code

• 7 mW / 1200 V M3S SiC MOSFET Full−Bridge

= Assembly & Test Site

Code

• HPS DBC

• Thermistor

YWW

= Year and Work Week

Code

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

• Press−Fit Pins

PIN CONNECTIONS

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH007F120M3F2PTHG Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

Publication Order Number:

March, 2024 − Rev. P3

NXH007F120M3F2/D

12 3 4 5 6 7...11

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