型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NXFT15XW222EEAB050 | MURATA |
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1. High accuracy and high sensibility temperature sensing is available by the small size a | |
NXH003P120M3F2PTHG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC, 3 mo | |
NXH004P120M3F2PTHG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC, 4 mo | |
NXH006P120M3F2PTHG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC,?6 mo | |
NXH006P120MNF2PTG | ONSEMI |
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Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 | |
NXH007F120M3F2PTHG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC, 7 mo | |
NXH008P120M3F1PTG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC, 8 mo | |
NXH010P120M3F1PTG | ONSEMI |
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Silicon Carbide (SiC) Module – EliteSiC,?10 m | |
NXH010P120MNF1PG | ONSEMI |
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SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET | |
NXH010P120MNF1PNG | ONSEMI |
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SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET |