Datasheet > NX7539BB-AA

NX7539BB-AA

更新时间： 2024-11-13 12:20:43

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管激光二极管
页数	文件大小	规格书
8页	173K
描述
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

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NX7539BB-AA 技术参数

Preliminary Data Sheet

NX7539BB-AA

LASER DIODE

R08DS0008EJ0300

Rev.3.00

Sep 19, 2010

1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

DESCRIPTION

The NX7539BB-AA is a 1 550 nm Multiple Quantum Well (MQW) structured

Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This

module is specified to operate under pulsed condition and designed for light

source of Optical Time Domain Reflectometer (OTDR).

<R>

FEATURES

•

High output power

Long wavelength

Pf = 40 mW @ IFP = 400 mA^*1

λ^C= 1 550 nm

*1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R08DS0008EJ0300 Rev.3.00

Sep 19, 2010

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型号	品牌	获取价格	描述	数据表
NX7539BB-AA-AZ	CEL	获取价格	1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX7561JB	ETC	获取价格	Optoelectronic
NX7561JB-BC	CEL	获取价格	NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW
NX7561JB-BC-AZ	CEL	获取价格	NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW
NX7563JB-BC	RENESAS	获取价格	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
NX7563JB-BC	CEL	获取价格	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
NX7563JB-BC-AZ	CEL	获取价格	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
NX7637BF-AA	RENESAS	获取价格	1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX7639BB-AA	RENESAS	获取价格	1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX7660JC	NEC	获取价格	InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION