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NX7329BB-AA PDF预览

NX7329BB-AA

更新时间: 2024-02-24 02:46:50
品牌 Logo 应用领域
CEL 光纤二极管脉冲
页数 文件大小 规格书
4页 192K
描述
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)

NX7329BB-AA 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
主体长度或直径:7 mm最长下降时间:1 ns
光纤设备类型:LASER DIODE MODULE EMITTER光纤类型:SMF
安装特点:PANEL MOUNT, THROUGH HOLE MOUNT最大工作波长:1330 nm
最小工作波长:1290 nm标称工作波长:1310 nm
上升时间:1 ns光谱宽度:4.5 nm
表面贴装:NO最小阈值电流:20 mA
传输类型:DIGITALBase Number Matches:1

NX7329BB-AA 数据手册

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NEC's 1310 nm InGaAsP MQW FP  
PULSED LASER DIODE  
NX7329BB-AA  
IN COAXIAL PACKAGE  
FOR OTDR APPLICATION (25 mW MIN)  
FEATURES  
DESCRIPTION  
NEC's NX7329BB-AA is a 1310 nm Multiple Quantum Well  
(MQW) structured laser diode coaxial module with single  
mode fiber. This module is specified to operate under pulsed  
condition and is designed for a light source of Optical Time  
Domain Reflectometer (OTDR).  
HIGH OUTPUT POWER:  
Pf = 50 mW at IFP = 400 mA,  
Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1%  
LONG WAVELENGTH  
λC = 1310 nm  
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)  
PART NUMBER  
NX7329BB-AA  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Forward Voltage, IFP = 400 mA, PW = 10 µs, Duty = 1%  
Threshold Current  
UNITS  
V
MIN  
TYP  
2.5  
20  
MAX  
4.0  
VFP  
ITH  
Pf  
mA  
30  
Optical Output Power from Fiber,  
IFP = 400 mA, PW = 10 µs, Duty = 1%  
mW  
nm  
25  
50  
1310  
4.5  
λC  
Center Wavelength,  
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)  
1290  
1330  
σ
Spectral Width,  
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)  
nm  
ns  
10  
1.0  
1.0  
tr  
tf  
Rise Time, 10 to 90%  
Fall Time, 90 to 10%  
ns  
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°C)  
PART NUMBER  
NX7329BB-AA  
TYP  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Threshold Current,  
UNITS  
MIN  
MAX  
ITH  
Pf  
mA  
50  
Optical Output Power from Fiber  
IFP = 400 mA, PW = 10 µs, Duty = 1%  
mA  
15  
λC  
Center Wavelength,  
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)  
nm  
1280  
1342.5  
10  
∆λ/T  
Temperature Dependence of Center Wavelength  
nm/°C  
0.35  
σ
Spectral Width,  
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)  
nm  
California Eastern Laboratories  

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