是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | compliant | 风险等级: | 5.86 |
主体高度: | 5.07 mm | 主体长度或直径: | 5.6 mm |
通信标准: | ITU-T, STM-1, STM-4 | 数据速率: | 1250 Mbps |
最长下降时间: | 0.15 ns | 光纤设备类型: | LASER DIODE EMITTER |
JESD-609代码: | e0 | 安装特点: | THROUGH HOLE MOUNT |
信道数量: | 2 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 最大工作波长: | 1330 nm |
最小工作波长: | 1290 nm | 标称工作波长: | 1310 nm |
上升时间: | 0.15 ns | 光谱宽度: | 1 nm |
电源电流: | 0.3 mA | 最大供电电压: | 1.5 V |
标称供电电压: | 1.1 V | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 最小阈值电流: | 6 mA |
传输类型: | DIGITAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX5312EK-AZ | CEL |
获取价格 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s A | |
NX5313 | CEL |
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1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS | |
NX5313EH | CEL |
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1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS | |
NX5313EK | CEL |
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1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS | |
NX5315 | CEL |
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NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS | |
NX5315EH | NEC |
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Laser Diode Emitter, 1276nm Min, 1352nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE-3 | |
NX5315EH | CEL |
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1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE | |
NX5315EH_06 | CEL |
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1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE | |
NX5315EH-AZ | CEL |
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NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS | |
NX5315EH-AZ | RENESAS |
获取价格 |
LASER DIODE W/MONITOR,1.31UM PEAK WAVELENGTH,CAN-5.6 |