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NX5312EK PDF预览

NX5312EK

更新时间: 2024-09-17 19:41:19
品牌 Logo 应用领域
日电电子 - NEC 通信光纤
页数 文件大小 规格书
7页 89K
描述
Laser Diode Emitter, 1290nm Min, 1330nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE-4

NX5312EK 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.86
主体高度:5.07 mm主体长度或直径:5.6 mm
通信标准:ITU-T, STM-1, STM-4数据速率:1250 Mbps
最长下降时间:0.15 ns光纤设备类型:LASER DIODE EMITTER
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
信道数量:2最高工作温度:85 °C
最低工作温度:-40 °C最大工作波长:1330 nm
最小工作波长:1290 nm标称工作波长:1310 nm
上升时间:0.15 ns光谱宽度:1 nm
电源电流:0.3 mA最大供电电压:1.5 V
标称供电电压:1.1 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)最小阈值电流:6 mA
传输类型:DIGITALBase Number Matches:1

NX5312EK 数据手册

 浏览型号NX5312EK的Datasheet PDF文件第2页浏览型号NX5312EK的Datasheet PDF文件第3页浏览型号NX5312EK的Datasheet PDF文件第4页浏览型号NX5312EK的Datasheet PDF文件第5页浏览型号NX5312EK的Datasheet PDF文件第6页浏览型号NX5312EK的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
LASER DIODE  
NX5312 Series  
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,  
InGaAsP MQW-FP LASER DIODE  
DESCRIPTION  
The NX5312 Series is a 1 310 nm Multiple Quantum Well (MQW)  
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These  
devices are designed for application up to 1.25 Gb/s.  
APPLICATIONS  
STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations  
FTTH (Fiber To The Home) system  
FEATURES  
Optical output power  
Low threshold current  
Differential Efficiency  
Po = 5.0 mW  
lth = 6 mA  
ηd = 0.45 W/A  
Wide operating temperature range TC = 40 to +85°C  
InGaAs monitor PIN-PD  
CAN package  
Focal point  
φ 5.6 mm  
6.35 mm  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PL10528EJ01V0DS (1st edition)  
Date Published August 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices, Ltd. 2004  

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