Datasheet > NX29F010-55PLI

NX29F010-55PLI

更新时间： 2024-09-26 23:55:07

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
25页	435K
描述
x8 Flash EEPROM

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NX29F010-55PLI 数据手册

NX29F010

1M-BIT (128K x 8-bit)

CMOS, 5.0V Only

ULTRA-FAST SECTORED FLASH MEMORY

JUNE 2000

FEATURES

• Ultra-fastPerformance

• Flexiblesectorarchitecture

– 35, 45, 55, 70, and 90 ns max. access times

– Erase any of eight uniform sectors or full chip erase

– Sectorprotection/unprotectionusingPROM

programmingequipment

• TemperatureRanges

– Commercial0^oc-70^oc

– Industrial-40^oc-85^oc

• 100,000Program/Erasecycles

• Single 5V-only Power Supply

• Embeddedalgorithms

– 5V ± 10% for Read, Program, and Erase

– Automatically programs and verifies data at

specifiedaddress

– Auto-programs and erases the chip or any

designatedsector

• CMOS Low Power Consumption

– 20 mA (typical) active read current

– 30 mA (typical) Program/Erase current

• CompatiblewithJEDEC-StandardPinouts

– 32-pin DIP, PLCC, TSOP

• Data/Polling and Toggle Bits

• Program/functionCompatiblewithAM29F010

– No system firmware changes

– Detect program or erase cycle completion

– UsessamePROMprogrameralgorithm

DESCRIPTION

Principles of Operation

TheNexFlashNX29F010isa1Megabit(131,072bytes)

single 5.0V-only Sectored Flash Memory. The NX29F010

providesin-systemprogrammingwiththestandardsystem

5.0V-onlyVccsupplyandcanbeprogrammedorerasedin

standard PROM programmers.

Onlyasingle5.0Vpowersupplyisrequiredforbothreadand

writefunctions.Programoreraseoperationsdonotrequire

12.0VVPP.Internallygeneratedandregulatedvoltagesare

provided for the program and erase operations.

The device is entirely command set compatible with the

JEDEC single power supply Flash standard. Commands

are written to the command register using standard micro-

processorwritetimings.Registercontentsserveasinputto

an internal state machine that controls the erase and

programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and

erase operations. Reading data out of the device is similar

to reading from other Flash or EPROM devices.

The NX29F010 offers access times of 35, 45, 55, 70, and

90 ns allowing high-speed controller and DSPs' to operate

without wait states. Byte-wide data appears on DQ0-DQ7.

Separate chip enable (CE), write enable (WE), and output

enable (OE) controls eliminates bus contention.

Power consumption is greatly reduced when the system

places the device into the Standby Mode.

The device is offered in 32-pin PLCC, TSOP, and PDIP

packages.

Executing the Program Command Sequence invokes the

Embedded Program Algorithm, an internal algorithm that

automatically times the program pulse widths and verifies

proper cell margin.

ThisdocumentcontainsPRELIMINARYdata.NexFlashreservestherighttomakechangestoitsproductsatanytimewithoutnoticeinordertoimprovedesignandsupplythebestpossibleproduct.We

NexFlashTechnologies, Inc.

NXPF001F-0600

06/22/00 ©

12 3 4 5 6 7...25

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与NX29F010-55PLI相关器件

型号	品牌	获取价格	描述	数据表
NX29F010-55T	ETC	获取价格	x8 Flash EEPROM
NX29F010-55TI	ETC	获取价格	x8 Flash EEPROM
NX29F010-55W	ETC	获取价格	x8 Flash EEPROM
NX29F010-70PL	ETC	获取价格	x8 Flash EEPROM
NX29F010-70PLI	ETC	获取价格	x8 Flash EEPROM
NX29F010-70T	ETC	获取价格	x8 Flash EEPROM
NX29F010-70TI	ETC	获取价格	x8 Flash EEPROM
NX29F010-70W	ETC	获取价格	x8 Flash EEPROM
NX29F010-90PL	ETC	获取价格	x8 Flash EEPROM
NX29F010-90PLI	ETC	获取价格	x8 Flash EEPROM

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