Datasheet > NX2301P

NX2301P

更新时间： 2024-11-18 12:30:59

品牌	Logo	应用领域
TYSEMI		晶体驱动器继电器晶体管开关光电二极管
页数	文件大小	规格书
3页	228K
描述
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver

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NX2301P 数据手册

Product specification

NX2301P

20 V, 2 A P-channel Trench MOSFET

Rev. 1 — 26 October 2010

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

1.8 V R_DSonrated for Low Voltage Gate Drive

Very fast switching

Trench MOSFET technology

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

T_amb= 25 °C

Min

Typ

Max

−20

±8

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

[1]

[2]

T_amb= 25 °C;

V_GS= −4.5 V

−2

R_DSon

drain-source on-state

resistance

T_j= 25 °C;

V_GS= −4.5 V;

I_D= −1 A

100

120

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm², t ≤ 5 s.

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.01.

http://www.twtysemi.com

sales@twtysemi.com

1 of 3

4008-318-123

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