Datasheet > NVXK2VR40WDT2

NVXK2VR40WDT2

更新时间： 2024-04-09 18:59:33

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	1021K
描述
1200V 3 Phase Bridge Power Module

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中文翻译

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NVXK2VR40WDT2 数据手册

DATA SHEET

www.onsemi.com

SiC Power MOSFET Module

Max

(BR)DSS

DS(on)

1200 V

59 mW @ 20 V

31 A

1200 V, 40 mW, 31 A

3-Phase Bridge Power Module

B+

NTC1

NTC2

NVXK2VR40WDT2

Features

• DIP Silicon Carbide 3−Phase Bridge Power Module for On−board

Charger (OBC) for xEV Applications

PH3

PH1

PH2

• Creepage and Clearance per IEC 60664−1, IEC 60950−1

• Compact Design for Low Total Module Resistance

• Module Serialization for Full Traceability

^B−

• Lead Free, ROHS and UL94V−0 Compliant

• Automotive Qualified per AEC−Q101 and AQG324

SiC MOSFET 3−Phase Bridge Module

Typical Applications

• PFC for On−Board Charger in xEV Applications

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

DSS

NVXK2VR40WDT2

ZZZ ATYWW

NNNNNNN

APM32

44.00x28.80x5.70

CASE MODHM

Gate−to−Source Voltage

+25/−15

+20/−5

Recommended Operation Values

GSop

of Gate−to−Source Voltage, T ≤ 175°C

Continuous Drain

Current (Note 1)

= 25°C

NVXK2VR40WDT2 = Specific Device Code

ZZZ

NNN

= Lot Number

= Assembly Site & Test Location

= Year

= Work Week

= Serial Number

Power Dissipation (Note 1)

102

170

403

Pulsed Drain Current (Note 2)

= 25°C

= 25°C,

Single Pulse Surge Drain

Current Capability

DSC

t = 10 ms,

= 4.7 W

Operating Junction Temperature

Storage Temperature

−55 to 175 °C

−40 to 125 °C

B+ – 32

16 – NC

15 – NC

14 – G5

13 – S5

12 – G6

11 – S6

10 – G3

9 – S3

stg

B+ – 31

NTC2 – 30

NTC1 – 29

NC – 28

Source Current (Body Diode)

Single Pulse Drain–to−Source Avalanche

Energy (Note 3)

338

NC – 27

PH3 – 26

PH3 – 25

PH2 – 24

PH2 – 23

PH1 – 22

PH1 – 21

NC – 20

NC – 19

B− – 18

B− – 17

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

8 – S4

7 – G4

6 – S1

5 – G1

4 – S2

3 – G2

2 – NC

1 – NC

THERMAL CHARACTERISTICS (Note 1)

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance Junction−to−Case

(Note 1)

1.13

1.47

°C/W

APM32

Thermal Resistance Junction−to−Sink

(Note 1)

1.59

1.93

°C/W

ORDERING INFORMATION

1. Particular conditions specified determine thermal resistance values shown.

assembled to 3 mm thick

Infinite heatsink with T = 100°C for R . For R

Device

NVXK2VR40WDT2

Package

APM32

(Pb−Free)

Shipping

aluminum heatsink with infinite cooling bottom surface at 85°C, through 38 mm

thick TIM with 6.5 W/mK thermal conductivity.

10 ea / Tube

2. Repetitive rating limited by maximum junction temperature and

transconductance.

3. E based on initial T = 25°C, L = 1 mH, I = 26 A, V = 120 V, V = 18 V.

Publication Order Number:

January, 2024 − Rev. 4

NVXK2VR40WDT2/D

12 3 4 5 6 7 8

中文翻译

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