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NVXK2TR80WDT PDF预览

NVXK2TR80WDT

更新时间: 2024-11-29 11:15:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 679K
描述
EliteSiC Power Module for OBC, 80mΩ, 1200V, 20 A, Dual H-Bridge, in APM32 Series

NVXK2TR80WDT 数据手册

 浏览型号NVXK2TR80WDT的Datasheet PDF文件第2页浏览型号NVXK2TR80WDT的Datasheet PDF文件第3页浏览型号NVXK2TR80WDT的Datasheet PDF文件第4页浏览型号NVXK2TR80WDT的Datasheet PDF文件第5页浏览型号NVXK2TR80WDT的Datasheet PDF文件第6页浏览型号NVXK2TR80WDT的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Module – EliteSiC Power  
Module for OBC,  
V
R
Max  
I Max  
D
(BR)DSS  
DS(on)  
1200 V  
116 mW @ 20 V  
20 A  
80ꢀmohm, 1200ꢀV, 20 A,  
Dual Half-Bridge,  
in APM32 Series  
NVXK2TR80WDT  
Features  
SiC MOSFET HBridge Module  
DIP Silicon Carbide HBridge Power Module for Onboard Charger  
(OBC) for xEV Applications  
Creepage and Clearance per IEC 606641, IEC 609501  
Compact Design for Low Total Module Resistance  
Module Serialization for Full Traceability  
Lead Free, ROHS and UL94V0 Compliant  
Automotive Qualified per AECQ101 and AQG324  
Typical Applications  
DCDC and OnBoard Charger in xEV Applications  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
APM32  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
1200  
Unit  
V
V
DSS  
ORDERING INFORMATION  
GatetoSource Voltage  
V
GS  
+25/15  
+20/5  
V
Device  
Package  
Shipping  
Recommended Operation Values of  
V
GSop  
V
GatetoSource Voltage, T 175°C  
J
NVXK2TR80WDT  
APM32  
(PbFree)  
10 ea / Tube  
Continuous Drain  
T
= 25°C  
I
20  
82  
A
W
A
C
D
Current (Notes 1, 2)  
Power Dissipation  
(Note 1)  
P
D
Pulsed Drain Current  
(Note 3)  
T
T
p
R
= 25°C  
= 25°C,  
I
110  
266  
C
DM  
Single Pulse Surge  
Drain Current Capability  
I
A
C
DSC  
t = 10 ms,  
= 4.7 W  
G
Operating Junction and Storage  
Temperature  
T , T  
55 to  
175  
°C  
J
stg  
Source Current (Body Diode) (Note 2)  
I
S
18  
A
Single Pulse Drain–toSource  
Avalanche Energy (Note 4)  
E
AS  
180  
mJ  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Particular conditions specified determine thermal resistance values shown.  
Infinite heatsink with T = 100°C for R . For R  
assembled to 3 mm thick  
θ
Ψ
JS  
C
JC  
aluminum heatsink with infinite cooling bottom surface at 85°C, through 38 mm  
thick TIM with 6.5 W/mK thermal conductivity.  
2. Qualified per ECPE Guideline AQG 324.  
3. Repetitive rating limited by maximum junction temperature and  
transconductance.  
4. E based on initial T = 25°C, L = 1 mH, I = 19 A, V = 120 V, V = 18 V.  
AS  
J
AS  
DD  
GS  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
February, 2023 Rev. 2  
NVXK2TR80WDT/D  
 

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