DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Module – EliteSiC Power
Module for OBC,
V
R
Max
I Max
D
(BR)DSS
DS(on)
1200 V
116 mW @ 20 V
20 A
80ꢀmohm, 1200ꢀV, 20 A,
Dual Half-Bridge,
in APM32 Series
NVXK2TR80WDT
Features
SiC MOSFET H−Bridge Module
• DIP Silicon Carbide H−Bridge Power Module for On−board Charger
(OBC) for xEV Applications
• Creepage and Clearance per IEC 60664−1, IEC 60950−1
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, ROHS and UL94V−0 Compliant
• Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• DC−DC and On−Board Charger in xEV Applications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
APM32
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
V
DSS
ORDERING INFORMATION
Gate−to−Source Voltage
V
GS
+25/−15
+20/−5
V
Device
Package
Shipping
Recommended Operation Values of
V
GSop
V
Gate−to−Source Voltage, T ≤ 175°C
J
NVXK2TR80WDT
APM32
(Pb−Free)
10 ea / Tube
Continuous Drain
T
= 25°C
I
20
82
A
W
A
C
D
Current (Notes 1, 2)
Power Dissipation
(Note 1)
P
D
Pulsed Drain Current
(Note 3)
T
T
p
R
= 25°C
= 25°C,
I
110
266
C
DM
Single Pulse Surge
Drain Current Capability
I
A
C
DSC
t = 10 ms,
= 4.7 W
G
Operating Junction and Storage
Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode) (Note 2)
I
S
18
A
Single Pulse Drain–to−Source
Avalanche Energy (Note 4)
E
AS
180
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Particular conditions specified determine thermal resistance values shown.
Infinite heatsink with T = 100°C for R . For R
assembled to 3 mm thick
θ
Ψ
JS
C
JC
aluminum heatsink with infinite cooling bottom surface at 85°C, through 38 mm
thick TIM with 6.5 W/mK thermal conductivity.
2. Qualified per ECPE Guideline AQG 324.
3. Repetitive rating limited by maximum junction temperature and
transconductance.
4. E based on initial T = 25°C, L = 1 mH, I = 19 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 2
NVXK2TR80WDT/D