Datasheet > NVMFWS3D5N08XT1G

NVMFWS3D5N08XT1G

更新时间： 2024-04-09 18:58:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	157K
描述
Single N-Channel Power MOSFET 80V, 126 A,?3 mΩ

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFWS3D5N08XT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, STD Gate,

SO8FL

MAX

I MAX

(BR)DSS

DS(ON)

80 V

3.5 mW @ 10 V

119 A

D (5)

80 V, 3.5 mW, 119 A

NVMFWS3D5N08X

G (4)

Features

• Low Q , Soft Recovery Body Diode

S (1,2,3)

• Low R

to Minimize Conduction Losses

DS(on)

N−CHANNEL MOSFET

• Low Q and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Synchronous Rectification (SR) in DC−DC and AC−DC

• Primary Switch in Isolated DC−DC Converter

• Motor Drives

DFNW5 (SO−8FL)

CASE 507BA

• Automotive 48 V System

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

3D5N8W

AYWZZ

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

3D5N8W = Specific Device Code

Gate−to−Source Voltage

= Assembly Location

= Year

Continuous Drain Current

(Note 1)

= 25°C

= 100°C

= 25°C

= 25°C,

119

= Work Week

= Assembly Lot Code

Power Dissipation (Note 1)

Pulsed Drain Current

107

470

t = 100 ms

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Pulsed Source Current

(Body Diode)

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

STG

Source Current (Body Diode)

162

Single Pulse Avalanche Energy (Note 3)

(I = 44 A)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in , 1 oz Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. E of 97 mJ is based on started T = 25°C, I = 44 A, V = 64 V, V =

10 V, 100% avalanche tested.

Publication Order Number:

December, 2023 − Rev. 0

NVMFWS3D5N08X/D

12 3 4 5 6 7

下载PDF

与NVMFWS3D5N08XT1G相关器件

型号	品牌	描述	获取价格	数据表
NVMFWS3D6N10MCLT1G	ONSEMI	Single N-Channel Power MOSFET 100 V, 131 A, 3	获取价格
NVMFWS4D5N08XT1G	ONSEMI	Single N-Channel Power MOSFET 80V, 90 A, 4.5	获取价格
NVMFWS6D2N08XT1G	ONSEMI	Single N-Channel Power MOSFET 80V, 71 A, 6.2	获取价格
NVMFWS9D6P04M8LT1G	ONSEMI	MOSFET - Power, Single P-Channel	获取价格
NVMJD012N06CLTWG	ONSEMI	Dual N−Channel Power MOSFET 60V, 42A, 11.9mΩ	获取价格
NVMJD015N06CLTWG	ONSEMI	Dual N−Channel Power MOSFET 60V, 35A, 15mΩ	获取价格