Datasheet > NV6510ST

NV6510ST

更新时间： 2024-09-24 19:41:39

品牌	Logo	应用领域
日电电子 - NEC		光电
页数	文件大小	规格书
4页	40K
描述
Laser Diode, 655nm, 3 PIN

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中文翻译

获取价格

技术参数
数据手册

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NV6510ST 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	3 PIN
Reach Compliance Code：	compliant	风险等级：	5.92
配置：	SINGLE WITH BUILT-IN PHOTO DIODE	JESD-609代码：	e0
功能数量：	1	光电设备类型：	LASER DIODE
标称输出功率：	10 mW	峰值波长：	655 nm
形状：	ROUND	尺寸：	1 mm
端子面层：	Tin/Lead (Sn/Pb)	最大阈值电流：	50 mA
Base Number Matches：	1

NV6510ST 数据手册

PRELIMINARY DATA SHEET

VISIBLE LASER DIODE

NV6510ST,NV6510SU

10 mW, 655 nm VISIBLE LASER DIODE

HIGH OUTPUT POWER AND LOW CURRENT

DESCRIPTION

The NV6510ST and NV6510SU are AlGaInP 650 nm visible laser diodes and especially developed for DVD

applications. The newly developed Multiple Quantum Well (MQW) LD chip, can achieve low operating current, high

operating temperature and optical output power 10 mW.

FEATURES

•

Optical output power

Low threshold current

Low operating current

Low operating voltage

P^o= 10 mW

•

High operating temperature

Peak emission wavelength

Fundamental transverse mode

T^C= −10 to +70 °C

λ^p= 655 nm TYP.

I^th= 30 mA TYP.

I^op= 45 mA TYP.

V^op= 2.4 V TYP.

APPLICATIONS

•

DVD-ROM, DVD Player

PACKAGE DIMENSIONS

in millimeters

110˚±1.5˚

Chip Location

|∆X|, |∆Y|, |∆Z| ≤ 0.08

|∆ //|, |∆ | ≤ 2˚

θ θ

NV6510ST

NV6510SU

0.4±0.1

3 (Case)

5.6_–0.025

4.4

3.55

1.0

LD Chip

Kovar Glass

0.75 MAX.

PIN CONNECTIONS

1. PD Anode

2. LD Anode

3. Case Ground

1. PD Cathode

2. LD Anode

3–φ0.45

3. Case Ground

2.0±0.2

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14115EJ1V0DS00 (1st edition)

Date Published February 1999 NS CP(K)

Printed in Japan

1999

12 3 4

中文翻译

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