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NTTFS4928NTAG PDF预览

NTTFS4928NTAG

更新时间: 2024-11-05 10:30:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体转换器小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 140K
描述
Power MOSFET 30 V, 37 A, Single N?Channel, 8FL DC?DC Converters

NTTFS4928NTAG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DFN
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 511AB-01, WDFN-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:5.66
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):37 A最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):20.8 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTTFS4928NTAG 数据手册

 浏览型号NTTFS4928NTAG的Datasheet PDF文件第2页浏览型号NTTFS4928NTAG的Datasheet PDF文件第3页浏览型号NTTFS4928NTAG的Datasheet PDF文件第4页浏览型号NTTFS4928NTAG的Datasheet PDF文件第5页浏览型号NTTFS4928NTAG的Datasheet PDF文件第6页浏览型号NTTFS4928NTAG的Datasheet PDF文件第7页 
NTTFS4928N  
Power MOSFET  
30 V, 37 A, Single NChannel, m8FL  
Features  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
Optimized Gate Charge to Minimize Switching Losses  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
9.0 mW @ 10 V  
Applications  
30 V  
37 A  
13.5 mW @ 4.5 V  
DCDC Converters  
Power Load Switch  
Notebook Battery Management  
Motor Control  
NChannel MOSFET  
D (58)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
G (4)  
GatetoSource Voltage  
V
GS  
Continuous Drain  
I
D
T = 25°C  
11.8  
8.5  
A
S (1,2,3)  
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
Power Dissipation R  
(Note 1)  
T = 25°C  
P
2.12  
W
A
q
A
D
JA  
MARKING DIAGRAM  
1
Continuous Drain  
I
D
T = 25°C  
A
15.9  
11.5  
3.86  
1
S
S
S
G
D
D
D
D
Current R  
(Note 1)  
10 s  
q
JA  
4928  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
T = 85°C  
A
Power Dissipation  
10 s (Note 1)  
T = 25°C  
A
P
I
W
A
D
D
D
R
Steady  
State  
q
JA  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
7.3  
5.2  
D
4928  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
q
JA  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.81  
W
A
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
37  
27  
D
(Note: Microdot may be in either location)  
q
JC  
Power Dissipation  
(Note 1)  
P
20.8  
W
R
q
JC  
ORDERING INFORMATION  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
160  
A
A
p
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
T ,  
55 to  
+150  
°C  
J
stg  
NTTFS4928NTAG  
WDFN8  
(PbFree)  
1500 / Tape &  
Reel  
T
Source Current (Body Diode)  
I
S
20  
6.0  
20  
A
NTTFS4928NTWG WDFN8  
5000 / Tape &  
Reel  
Drain to Source dV/dt  
dV/dt  
V/ns  
mJ  
(PbFree)  
Single Pulse DraintoSource Avalanche Energy  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
(T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I = 20 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
May, 2011 Rev. 0  
NTTFS4928N/D  
 

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