NTTFS4928N

更新时间： 2024-11-01 10:30:15

品牌	Logo	应用领域
安森美 - ONSEMI		转换器
页数	文件大小	规格书
7页	140K
描述
Power MOSFET 30 V, 37 A, Single N?Channel, 8FL DC?DC Converters

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NTTFS4928N 数据手册

NTTFS4928N

Power MOSFET

30 V, 37 A, Single N−Channel, m8FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(on)

9.0 mW @ 10 V

Applications

30 V

37 A

13.5 mW @ 4.5 V

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

• Motor Control

N−Channel MOSFET

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

T = 25°C

11.8

8.5

S (1,2,3)

Current R

(Note 1)

T = 85°C

Power Dissipation R

(Note 1)

T = 25°C

2.12

MARKING DIAGRAM

Continuous Drain

T = 25°C

15.9

11.5

3.86

Current R

(Note 1)

≤ 10 s

4928

AYWWG

WDFN8

(m8FL)

CASE 511AB

T = 85°C

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

Steady

State

Continuous Drain

Current R (Note 2)

T = 25°C

7.3

5.2

4928

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.81

Continuous Drain

Current R (Note 1)

= 25°C

= 85°C

= 25°C

(Note: Microdot may be in either location)

Power Dissipation

(Note 1)

20.8

ORDERING INFORMATION

Pulsed Drain Current

T = 25°C, t = 10 ms

160

†

Device

Package

Shipping

Operating Junction and Storage Temperature

T ,

−55 to

+150

°C

stg

NTTFS4928NTAG

WDFN8

(Pb−Free)

1500 / Tape &

Reel

Source Current (Body Diode)

6.0

NTTFS4928NTWG WDFN8

5000 / Tape &

Reel

Drain to Source dV/dt

dV/dt

V/ns

(Pb−Free)

Single Pulse Drain−to−Source Avalanche Energy

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(T = 25°C, V = 50 V, V = 10 V,

I = 20 A , L = 0.1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

May, 2011 − Rev. 0

NTTFS4928N/D

12 3 4 5 6 7

中文翻译

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与NTTFS4928N相关器件

型号	品牌	获取价格	描述	数据表
NTTFS4928NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 37 A, Single N?Channel, 8FL DC?DC Converters
NTTFS4928NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 37 A, Single N?Channel, 8FL DC?DC Converters
NTTFS4929N	ONSEMI	获取价格	Power MOSFET 30 V, 34 A, Single NâChannel,
NTTFS4929NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 34 A, Single NâChannel,
NTTFS4929NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 34 A, Single NâChannel,
NTTFS4930N	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N?Channel, 8FL Notebook Battery Management
NTTFS4930NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N?Channel, 8FL Notebook Battery Management
NTTFS4930NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N?Channel, 8FL Notebook Battery Management
NTTFS4932N	ONSEMI	获取价格	Power MOSFET 30 V, 79 A, Single N−Chann
NTTFS4932NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 79 A, Single N−Chann

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