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NTTFS4840NTAG PDF预览

NTTFS4840NTAG

更新时间: 2024-11-01 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 139K
描述
Power MOSFET 30 V, 26 A, Single N−Channel, μ8FL

NTTFS4840NTAG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:DFN包装说明:3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, CASE 511AB-01, WDFN8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.69
雪崩能效等级(Eas):16.7 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):4.6 A最大漏源导通电阻:0.036 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-XDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):77 A认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTTFS4840NTAG 数据手册

 浏览型号NTTFS4840NTAG的Datasheet PDF文件第2页浏览型号NTTFS4840NTAG的Datasheet PDF文件第3页浏览型号NTTFS4840NTAG的Datasheet PDF文件第4页浏览型号NTTFS4840NTAG的Datasheet PDF文件第5页浏览型号NTTFS4840NTAG的Datasheet PDF文件第6页浏览型号NTTFS4840NTAG的Datasheet PDF文件第7页 
NTTFS4840N  
Power MOSFET  
30 V, 26 A, Single NChannel, m8FL  
Features  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
Optimized Gate Charge to Minimize Switching Losses  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
24 mW @ 10 V  
36 mW @ 4.5 V  
DCDC Converters  
Point of Load  
30 V  
26 A  
Power Load Switch  
Notebook Battery Management  
Motor Control  
NChannel MOSFET  
D (58)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
V
30  
20  
V
V
A
DSS  
GatetoSource Voltage  
V
GS  
G (4)  
Continuous Drain  
I
D
T = 25°C  
7.3  
5.3  
2.2  
A
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
S (1,2,3)  
Power Dissipation R  
(Note 1)  
T = 25°C  
A
P
W
A
q
D
JA  
MARKING DIAGRAM  
Continuous Drain  
I
D
T = 25°C  
A
10.3  
7.5  
1
Current R  
(Note 1)  
10 s  
1
q
JA  
S
S
S
G
D
D
D
D
T = 85°C  
A
4840  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Power Dissipation  
10 s (Note 1)  
T = 25°C  
P
I
4.4  
W
A
A
D
D
D
R
Steady  
State  
q
JA  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
4.6  
3.3  
D
q
JA  
4840  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.84  
W
A
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
26  
19  
D
q
JC  
(Note: Microdot may be in either location)  
Power Dissipation  
(Note 1)  
P
27.8  
W
R
q
JC  
ORDERING INFORMATION  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
77  
20  
A
A
A
p
Device  
Package  
Shipping  
Current Limited by Pkg.  
T = 25°C  
A
I
DmaxPkg  
Operating Junction and Storage Temperature  
T ,  
stg  
55 to  
+150  
°C  
NTTFS4840NTAG  
WDFN8 1500/Tape & Reel  
(PbFree)  
J
T
Source Current (Body Diode)  
I
23  
6.0  
A
S
NTTFS4840NTWG WDFN8 5000/Tape & Reel  
(PbFree)  
Drain to Source DV/DT  
dV/dt  
V/ns  
mJ  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single Pulse DraintoSource Avalanche Energy  
E
AS  
16.7  
(T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I = 18.3 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 0  
NTTFS4840N/D  
 

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