NTTFS4840N
Power MOSFET
30 V, 26 A, Single N−Channel, m8FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
24 mW @ 10 V
36 mW @ 4.5 V
• DC−DC Converters
• Point of Load
30 V
26 A
• Power Load Switch
• Notebook Battery Management
• Motor Control
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
30
20
V
V
A
DSS
Gate−to−Source Voltage
V
GS
G (4)
Continuous Drain
I
D
T = 25°C
7.3
5.3
2.2
A
Current R
(Note 1)
q
JA
T = 85°C
A
S (1,2,3)
Power Dissipation R
(Note 1)
T = 25°C
A
P
W
A
q
D
JA
MARKING DIAGRAM
Continuous Drain
I
D
T = 25°C
A
10.3
7.5
1
Current R
(Note 1)
≤ 10 s
1
q
JA
S
S
S
G
D
D
D
D
T = 85°C
A
4840
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
P
I
4.4
W
A
A
D
D
D
R
Steady
State
q
JA
Continuous Drain
Current R (Note 2)
T = 25°C
A
4.6
3.3
D
q
JA
4840
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
T = 85°C
A
Power Dissipation
(Note 2)
T = 25°C
A
P
I
0.84
W
A
R
q
JA
Continuous Drain
Current R (Note 1)
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
26
19
D
q
JC
(Note: Microdot may be in either location)
Power Dissipation
(Note 1)
P
27.8
W
R
q
JC
ORDERING INFORMATION
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
77
20
A
A
A
p
†
Device
Package
Shipping
Current Limited by Pkg.
T = 25°C
A
I
DmaxPkg
Operating Junction and Storage Temperature
T ,
stg
−55 to
+150
°C
NTTFS4840NTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
J
T
Source Current (Body Diode)
I
23
6.0
A
S
NTTFS4840NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
Drain to Source DV/DT
dV/dt
V/ns
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche Energy
E
AS
16.7
(T = 25°C, V = 50 V, V = 10 V,
J
DD
GS
I = 18.3 A , L = 0.1 mH, R = 25 W)
L
pk
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 0
NTTFS4840N/D