Datasheet > NTS2101P

NTS2101P

更新时间： 2024-09-24 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	62K
描述
Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70

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NTS2101P 数据手册

NTS2101P

Power MOSFET

−8.0 V, −1.4 A, Single P−Channel, SC−70

Features

• Leading Trench Technology for Low R

Extending Battery Life

http://onsemi.com

DS(on)

• −1.8 V Rated for Low Voltage Gate Drive

DS(on)

Typ

I Max

• SC−70 Surface Mount for Small Footprint (2 x 2 mm)

• Pb−Free Package is Available

(BR)DSS

65 mW @ −4.5 V

78 mW @ −2.5 V

−8.0 V

−1.4 A

Applications

117 mW @ −1.8 V

• High Side Load Switch

• Charging Circuit

• Single Cell Battery Applications such as Cell Phones,

Digital Cameras, PDAs, etc.

P−Channel MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

−8.0

8.0

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

−1.4

−1.1

−1.5

0.29

T = 70°C

t ≤ 5 s T = 25°C

MARKING DIAGRAM &

PIN ASSIGNMENT

Power Dissipation

(Note 1)

Steady T = 25°C

State

Drain

t ≤ 5 s

0.33

−3.0

Pulsed Drain Current

tp = 10 ms

TS M G

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

SC−70/SOT−323

CASE 419

STG

Source Current (Body Diode), Continuous

−0.46

260

Gate Source

STYLE 8

Lead Temperature for Soldering Purposes

°C

(1/8″ from case for 10 s)

= Device Code

= Date Code*

= Pb−Free Package

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

430

375

Units

(Note: Microdot may be in either location)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient − t ≤ 5 s (Note 1)

°C/W

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†

Device

Package

Shipping

NTS2101PT1

SOT−323

3000/Tape & Reel

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

SOT−323

(Pb−Free)

NTS2101PT1G

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 1

NTS2101P/D

12 3 4 5

中文翻译

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与NTS2101P相关器件

型号	品牌	获取价格	描述	数据表
NTS2101PT1	ONSEMI	获取价格	Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70
NTS2101PT1G	ONSEMI	获取价格	Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70
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NTS245ESFT3G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NTS245SF	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NTS245SFT1G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
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NTS-25	RICHCO	获取价格	NYLON THREADED SPACERS
NTS-250P	MEANWELL	获取价格	250W High Reliable Built-in Type True Sine Wave DC-AC Power Inverter
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