Datasheet > NTR4101P

NTR4101P

更新时间： 2024-11-18 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	221K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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NTR4101P 数据手册

SMD Type

MOSFET

P-Channel MOSFET

NTR4101P (KTR4101P)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● VDS (V) =-20V

● ID =-3.2 A

● R^DS(ON)＜ 85mΩ (VGS =-4.5V)

● R^DS(ON)＜ 120mΩ (VGS =-2.5V)

● R^DS(ON)＜ 210mΩ (VGS =-1.8V)

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

VDS

Gate-Source Voltage

±8

-2.4

-1.7

-3.2

0.73

1.25

-1.8

-1.3

0.42

-7.5

Ta = 25℃

Ta = 85℃

Ta = 25℃

Steady State

t ≤ 10s

Continuous Drain Current @Steady State (Note.1)

Continuous Drain Current @t ≤ 10s

Power Dissipation (Note.1)

(Note.1)

Ta = 25℃

Ta = 85℃

Continuous Drain Current (Note.2)

Power Dissipation

(Note.2)

Pulsed Drain Current

tp = 10us

IDM

C = 100 pF

RS = 1500Ω

ESD Capability

(Note 3)

ESD

225

℃/W

℃

Steady State

t ≤ 10 s

170

100

300

150

Thermal Resistance.Junction- to-Ambient (Note.1)

RthJA

Thermal Resistance.Junction- to-Ambient (Note.2)

Junction Temperature

Steady State

Storage Temperature Range

stg

-55 to 150

Note.1:Surface−mounted on FR4 board using 1 in sq pad size

Note.2:Surface−mounted on FR4 board using the minimum recommended pad size

Note.3:ESD Rating Information: HBM Class 0

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