NTP52N10/D

更新时间： 2024-11-25 22:28:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	76K
描述
Power MOSFET 52 Amps, 100 Volts

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中文翻译

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数据手册

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NTP52N10/D 数据手册

NTP52N10

Power MOSFET

52 Amps, 100 Volts

N−Channel Enhancement Mode TO−220

Features

• Source−to−DrainDiode Recovery Time comparable to a Discrete

Fast Recovery Diode

http://onsemi.com

• Avalanche Energy Specified

52 AMPERES

100 VOLTS

30 mΩ @ V_GS= 10 V

• I

and R

Specified at Elevated Temperature

DSS

DS(on)

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

100

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Source Voltage (R = 1.0 MΩ)

100

Gate−to−Source Voltage

− Continuous

"20

"40

− Non−Repetitive (t v10 ms)

GSM

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain− Continuous @ T 25°C

Adc

− Continuous @ T 100°C

− Pulsed (Note 1.)

156

Drain

Total Power Dissipation @ T 25°C

Derate above 25°C

178

1.43

Watts

W/°C

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

TO−220AB

CASE 221A

STYLE 5

Single Drain−to−Source Avalanche Energy

800

NTP52N10

LLYWW

− Starting T = 25°C

(V = 50 V, V = 10 Vdc,

I (pk) = 40 A, L = 1.0 mH, R = 25 Ω)

Gate

Source

Thermal Resistance

°C/W

°C

− Junction−to−Case

− Junction−to−Ambient

0.7

62.5

Drain

NTP52N10 = Device Code

Maximum Lead Temperature for Soldering

260

= Location Code

Purposes, 1/8″ from case for 10 seconds

= Year

= Work Week

1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.

ORDERING INFORMATION

Device

NTP52N10

Package

Shipping

50 Units/Rail

TO−220AB

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

December, 2003 − Rev. 2

NTP52N10/D

12 3 4 5 6 7 8

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