Datasheet > NTMD3P03R2G

NTMD3P03R2G

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	427K
描述
种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-3.05A;Vgs(th)(V):±20;漏源导通电阻:85mΩ@-10V

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数据手册

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NTMD3P03R2G 数据手册

3P03R2G

-30V Dual P-Channel MOSFET

UMW

Features

• High Efficiency Components in a Dual SOP−8 Package

• High Density Power MOSFET with Low R

DS(on)

• Miniature SOP−8 Surface Mount Package − Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

•

VDS (V) = -30V

85m

RDS(ON) ＜

Ω(V

=-10V)

125m

Ω(V

=-4.5V)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

−30

Gate−to−Source Voltage − Continuous

Thermal Resistance −

Junction−to−Ambient (Note 1)

171

0.73

−2.34

−1.87

−8.0

°C/W

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Pulsed Drain Current (Note 4)

Thermal Resistance −

Junction−to−Ambient (Note 2)

100

1.25

−3.05

−2.44

−12

°C/W

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Pulsed Drain Current (Note 4)

Thermal Resistance −

Junction−to−Ambient (Note 3)

62.5

2.0

−3.86

−3.1

−15

°C/W

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Pulsed Drain Current (Note 4)

Operating and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

Single Pulse Drain−to−Source Avalanche

140

Energy − Starting T = 25°C

(V = −30 Vdc, V = −4.5 Vdc, Peak I

= −7.5 Apk, L = 5 mH, R = 25 W)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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