Datasheet > NTE980

NTE980

更新时间： 2024-11-22 22:50:55

品牌	Logo	应用领域
NTE		/
页数	文件大小	规格书
5页	45K
描述
Integrated Circuit CMOS, Micropower Phase-Locked Loop (PLL)

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NTE980 数据手册

NTE980

Integrated Circuit

CMOS, Micropower Phase–Locked Loop (PLL)

Description:

The NTE980 CMOS Micropower Phase–Locked Loop (PLL) consists of a low–power, linear voltage–

controlled oscillator (VCO) and two different phase comparators having a common signal–input am-

plifier and a common comparator input in a 16–Lead type package. A 5.2V zener diode is provided

for supply regulation if necessary.

Features:

D Very Low Power Consumption: 70µW (Typ) @ VCO f_o= 10kHz, V_DD= 5V

D Operating Frequency Range up to 1.4MHz (Typ) @ V_DD= 10V, RI = 5kΩ

D Low Frequency Drift: 0.04%/°C (Typ) @ V_DD= 10V

D Choice of Two Phase Comparators:

Exclusive–OR Network (I)

Edge–Controlled Memory Network ^w/Phase–Pulse Output for Lock Indication (II)

D High VCO Linearity: < 1% (Typ) @ V_DD= 10V

D VCO Inhibit Control for ON–OFF Keying and Ultra–Low Standby Power Consumption

D Source–Follower Output of VCO Control Input (Demod. Output)

D Zener Diode to Assist Supply Regulation

D Standardized, Symmetrical Output Characteristics

D 100% Tested for Quiescent Current at 20V

D 5V, 10V, and 15V Parametric Ratings

Applications:

D FM Demodulator and Modulator

D Frequency Synthesis and Multiplication

D Frequency Discriminator

D FSK – Modems

D Data Synchronization

D Voltage–to–Frequency Conversion

D Tone Decoding

D Signal Conditioning

Absolute Maximum Ratings:

DC Supply Voltage Range (Voltages referenced to V_SSterminal), V_DD. . . . . . . . . . . . –0.5 to +20V

Input Voltage Range, All Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 to V_DD+0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mA

Power Dissipation (T_A= –40° to +60°C), P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

T_A= +60° to +85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly at 12mW/°C to 200mW

Device Dissipation Per Output Transistor (T_A= –40° to +85°C) . . . . . . . . . . . . . . . . . . . . . . . 100mW

Operating Temperature Range, T_A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec Max), T_L. . . . . . . . . . . +265°C

12 3 4 5

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