NTE904

更新时间： 2024-10-31 22:19:55

品牌	Logo	应用领域
NTE		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	33K
描述
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTE904 数据手册

NTE904

Integrated Circuit

General Purpose Transistor Array

(Two Isolated Transistors and a Darlington

Connected Transistor Pair)

Description:

The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub-

strate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

configuration. The substrate is connected to a separate terminal for maximum flexibility.

The transistors of the NTE904 are well suited to a wide variety of applications in low power systems

in the DC through VHF range. They may be used as discrete transistors in conventional circuits but

in addition they provide the advantages of close electrical and thermal matching inherent in integrated

circuit construction.

Features:

D Matched Monolithic General Purpose Transistors

D Current Gain Matched to ±10%

D Base–Emitter Voltage Matched to ±2mV

D Operation from DC to 120MHz

D Wide Operating Current Range

D Low Noise Figure

Applications:

D General use in Signal Processing Systems in DC through VHF Range

D Custom Designed Differential Amplifiers

D Temperature Compenstaed Amplifiers

Absolute Maximum Ratings: (T_A= +25°C unless otherwise specified)

Collector–Emitter Voltage (Each Transistor), V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector–Base Voltage (Each Transistor), V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Substrate Voltage (Each Transistor, Note 1), V_CIO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage (Each Transistor), V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current (Each Transistor), I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Power Dissipation, P_D

Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW

Derate Above 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C

Operating Temperature Range, T_opr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-

strate (Pin10) must be connected to the most negative point in the external circuit to maintain

isolation between transistors and to provide for normal transistor action.

12 3

中文翻译

下载PDF

与NTE904相关器件

型号	品牌	获取价格	描述	数据表
NTE906	NTE	获取价格	Integrated Circuit Dual, High Frequency, Differential Amplifier
NTE907	NTE	获取价格	Integrated Circuit Diode Array
NTE908	NTE	获取价格	Analog Circuit,
NTE909	NTE	获取价格	Integrated Circuits Operational Amplifier
NTE9093	NTE	获取价格	Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop
NTE9094	NTE	获取价格	Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop
NTE9097	ETC	获取价格	Logic IC
NTE9099	ETC	获取价格	Logic IC
NTE909D	NTE	获取价格	Integrated Circuits Operational Amplifier
NTE91	NTE	获取价格	Silicon Complementary Transistors General Purpose High Gain Amplifier

与NTE904相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NTE904

NTE904 数据手册

与NTE904相关器件

与NTE904相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTE904

NTE904 数据手册

与NTE904相关器件

与NTE904相关文章

您还可以找

您在本页遇到什么问题？