NTE904

更新时间： 2024-11-21 22:19:55

品牌	Logo	应用领域
NTE		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	33K
描述
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

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NTE904 数据手册

NTE904

Integrated Circuit

General Purpose Transistor Array

(Two Isolated Transistors and a Darlington

Connected Transistor Pair)

Description:

The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub-

strate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

configuration. The substrate is connected to a separate terminal for maximum flexibility.

The transistors of the NTE904 are well suited to a wide variety of applications in low power systems

in the DC through VHF range. They may be used as discrete transistors in conventional circuits but

in addition they provide the advantages of close electrical and thermal matching inherent in integrated

circuit construction.

Features:

D Matched Monolithic General Purpose Transistors

D Current Gain Matched to ±10%

D Base–Emitter Voltage Matched to ±2mV

D Operation from DC to 120MHz

D Wide Operating Current Range

D Low Noise Figure

Applications:

D General use in Signal Processing Systems in DC through VHF Range

D Custom Designed Differential Amplifiers

D Temperature Compenstaed Amplifiers

Absolute Maximum Ratings: (T_A= +25°C unless otherwise specified)

Collector–Emitter Voltage (Each Transistor), V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector–Base Voltage (Each Transistor), V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Substrate Voltage (Each Transistor, Note 1), V_CIO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage (Each Transistor), V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current (Each Transistor), I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Power Dissipation, P_D

Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW

Derate Above 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C

Operating Temperature Range, T_opr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-

strate (Pin10) must be connected to the most negative point in the external circuit to maintain

isolation between transistors and to provide for normal transistor action.

12 3

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