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NTE889 PDF预览

NTE889

更新时间: 2024-10-31 22:50:47
品牌 Logo 应用领域
NTE 运算放大器
页数 文件大小 规格书
3页 31K
描述
Integrated Circuit Dual, Low Power, JFET OP Amplifier

NTE889 数据手册

 浏览型号NTE889的Datasheet PDF文件第2页浏览型号NTE889的Datasheet PDF文件第3页 
NTE889M  
Integrated Circuit  
Dual, Low Power, JFET OP Amplifier  
Description:  
The NTE889M is a JFET–input operational amplifier in an 8–Lead DIP type package designed for low  
power applications and features high input impedance, low input bias current, and low input offset  
current. Advanced design techniques allow for higher slew rates, gain bandwidth products, and out-  
put swing.  
Features:  
D Low Supply Current: 200µA/Amplifier  
D Low Input Bias Current: 5pA  
D High Gain Bandwidth: 2MHz  
D High Slew rate: 6V/µs  
D High Input Impedance: 1012Ω  
D Large Output Voltage Swing: ±14V  
D Output Short Circuit Protection  
Absolute Maximum Ratings:  
Supply Voltage (From VCC to VEE), VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +36V  
Input Differential Input Voltage (Note 1), VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V  
Input Voltage Range (Note 1, Note 2), VIR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
Output Short–Circuit Duration (Note 3), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite Seconds  
Operating Junction Temperature (Note 3), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C  
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C  
Note 1. Differential voltages are at the non–inverting input terminal with respect to the inverting input  
terminal.  
Note 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage  
or 15V, whchever is less.  
Note 3. Power dissipation must be considered to ensure maximun junction temperature (TJ) is not  
exceeded.  

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