NTE888M
Integrated Circuit
Low Power Programmable Operational Amplifier
Description:
The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power con-
sumption and high input impedance. In addition, the quiescent currents within this device may be
programmed by the choice of an external resistor value or current source applied to the ISET input.
This allows the NTE888M’s characteristics to be optimized for input current and power consumption
despite wide variations in operating power supply voltages.
Features:
D ±1.2V to ±18V Operation
D Wide Programming Range
D Offset Null Capability
D No Frequency Compensation Required
D Low Input Bias Currents
D Short–Circuit Protection
Maximum Ratings: (TA = +25°C unless otherwise noted)
Power Supply Voltages, VCC, VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Common–Mode Input Voltage, VICM
VCC and |VEE| < 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC, VEE
VCC and |VEE| ≥ 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Offset Null to VEE Voltage, Voff – VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.5V
Programming Current, Iset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500µA
Programming Voltage, VSET
Voltage from ISET terminal to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC –2V) to VCC
Output Short–Circuit Duration (Note 1), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Note 1. May be to GND or either Supply Voltage. Rating applies up to a case temperature of +125°C
or ambient temperature of +70°C and ISET ≤ 30µA.