Datasheet > NTE859SM

NTE859SM

更新时间： 2024-11-22 22:50:47

品牌	Logo	应用领域
NTE		运算放大器
页数	文件大小	规格书
3页	33K
描述
Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

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NTE859SM 数据手册

NTE859/NTE859SM

Integrated Circuit

Quad, Low Noise, JFET Input

Operational Amplifier

Description:

The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational am-

plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low

harmonic distortion and low noise make these devices ideally suited as amplifiers for high–fidelity and

audio preamplifier applications. Each amplifier features JFET–inputs (for high input impedance)

coupled with bipolar output stages all integrated on a single monolithic chip.

Features:

D Low Power Consumption

D Wide Common–Mode and Differential Voltage Ranges

D Low Input Bias and Offset Currents

D Output Short–Circuit Protection

D Low Total Harmonic Distortion: 0.003% Typ

D Low Noise: Vn = 18nV√H_ZTyp

D High Input Impedance: JFET–Input Stage

D Internal Frequency Compensation

D Latch–Up Free Operation

D High Slew Rate: 13V/µs Typ

Absolute Maximum Ratings: (T_A= 0 to +70°C unless otherwise specified)

Supply Voltage (Note 1), V_CC(+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Supply Voltage (Note1), V_CC(–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V

Differential Input Voltage (Note 2), V_ID. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V

Input Voltage Range (Note 1, Note 3),V_IDR. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V

Duration of Output Short Circuit (Note 4),t_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited

Power Dissipation (T_A= +25°C), P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C

Operating Ambient Temperature Range, T_A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Lead Temperature (During Soldering, 1/16” from Case for 10sec), T_L. . . . . . . . . . . . . . . . . . +260°C

Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between

V_CC(+) and V_CC(–).

Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting pin.

Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage

or 15V, whichever is less.

Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages

must be limited to ensure that the dissipation rating is not exceeded.

12 3

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NTE859SM 替代型号

型号	品牌	替代类型	描述	数据表
TL064ACDRG4	TI	功能相似	LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS
NTE948SM	NTE	功能相似	Integrated Circuit Quad Operational Amplifier

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