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NTE859 PDF预览

NTE859

更新时间: 2024-11-22 22:50:47
品牌 Logo 应用领域
NTE 运算放大器
页数 文件大小 规格书
3页 33K
描述
Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

NTE859 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:DIP, DIP14,.3
针数:14Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:1.4放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.007 µA
25C 时的最大偏置电流 (IIB):0.0002 µA标称共模抑制比:86 dB
频率补偿:YES最大输入失调电流 (IIO):0.002 µA
最大输入失调电压:13000 µVJESD-30 代码:R-PDIP-T14
低-偏置:YES低-失调:NO
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:4端子数量:14
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE电源:+-15 V
认证状态:Not Qualified标称压摆率:13 V/us
子类别:Operational Amplifier最大压摆率:10 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:NO温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL标称均一增益带宽:3000 kHz
最小电压增益:15000Base Number Matches:1

NTE859 数据手册

 浏览型号NTE859的Datasheet PDF文件第2页浏览型号NTE859的Datasheet PDF文件第3页 
NTE859/NTE859SM  
Integrated Circuit  
Quad, Low Noise, JFET Input  
Operational Amplifier  
Description:  
The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational am-  
plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low  
harmonic distortion and low noise make these devices ideally suited as amplifiers for high–fidelity and  
audio preamplifier applications. Each amplifier features JFET–inputs (for high input impedance)  
coupled with bipolar output stages all integrated on a single monolithic chip.  
Features:  
D Low Power Consumption  
D Wide Common–Mode and Differential Voltage Ranges  
D Low Input Bias and Offset Currents  
D Output Short–Circuit Protection  
D Low Total Harmonic Distortion: 0.003% Typ  
D Low Noise: Vn = 18nVHZ Typ  
D High Input Impedance: JFET–Input Stage  
D Internal Frequency Compensation  
D Latch–Up Free Operation  
D High Slew Rate: 13V/µs Typ  
Absolute Maximum Ratings: (TA = 0 to +70°C unless otherwise specified)  
Supply Voltage (Note 1), VCC(+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V  
Supply Voltage (Note1), VCC(–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V  
Differential Input Voltage (Note 2), VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V  
Input Voltage Range (Note 1, Note 3),VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
Duration of Output Short Circuit (Note 4),tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited  
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C  
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Lead Temperature (During Soldering, 1/16” from Case for 10sec), TL . . . . . . . . . . . . . . . . . . +260°C  
Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between  
VCC(+) and VCC(–).  
Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting pin.  
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage  
or 15V, whichever is less.  
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages  
must be limited to ensure that the dissipation rating is not exceeded.  

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