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NTE857SM PDF预览

NTE857SM

更新时间: 2024-09-18 22:50:47
品牌 Logo 应用领域
NTE 运算放大器放大器电路光电二极管
页数 文件大小 规格书
3页 31K
描述
Integrated Circuit Low-Noise JFET-Input Operational Amplifier

NTE857SM 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:2.53
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.007 µA
25C 时的最大偏置电流 (IIB):0.0002 µA标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.002 µA
最大输入失调电压:13000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e0低-偏置:YES
低-失调:NO微功率:NO
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:2.5 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:4000 kHz
最小电压增益:15000Base Number Matches:1

NTE857SM 数据手册

 浏览型号NTE857SM的Datasheet PDF文件第2页浏览型号NTE857SM的Datasheet PDF文件第3页 
NTE857M  
NTE857SM  
Integrated Circuit  
Low–Noise JFET–Input Operational Amplifier  
Description:  
The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two  
state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally com-  
pensated operational amplifier has well matched high voltage JFET input devices for low input offset  
voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias cur-  
rents, input offset currents, and supply currents. Moreover, these devices exhibit low–noise and low  
harmonic distortion making them ideal for use in high–fidelity audio amplifier applications.  
Features:  
D Available in Two Different Package Types:  
8–Lead Mini DIP (NTE857M)  
SOIC–8 Surface Mount (NTE857SM)  
D Low Input Noise Voltage: 18nVHz Typ  
D Low Harmonic Distortion: 0.01% Typ  
D Low Input Bias and Offset Currents  
D High Input Impedance: 1012Typ  
D High Slew Rate: 13V/µs Typ  
D Wide Gain Bandwidth: 4MHz Typ  
D Low Supply Current: 1.4mA per Amp  
Absolute Maximum Ratings:  
Supply Voltage  
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V  
VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V  
Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V  
Input Voltage Range (Note 1), VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
Output Short–Circuit Duration (Note 2), tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous  
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW  
Derate Above TA = +47°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C  
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or  
15V, whichever is less.  
Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages  
must be limited to ensure that power dissipation ratungs are not exceeded.  

NTE857SM 替代型号

型号 品牌 替代类型 描述 数据表
NTE857M NTE

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Integrated Circuit Low-Noise JFET-Input Operational Amplifier

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