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NTE78 PDF预览

NTE78

更新时间: 2024-11-04 22:50:55
品牌 Logo 应用领域
NTE 晶体晶体管功率双极晶体管射频放大器局域网
页数 文件大小 规格书
2页 24K
描述
Silicon NPN Transistor RF Power Output

NTE78 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:1.71
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
配置:SINGLE最小直流电流增益 (hFE):35
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):27 MHz
Base Number Matches:1

NTE78 数据手册

 浏览型号NTE78的Datasheet PDF文件第2页 
NTE78  
Silicon NPN Transistor  
RF Power Output  
Description:  
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power  
amplifiers in HF band mobile radio applications.  
Features:  
D High Power Gain  
D Emitter Ballasted Construction for High Reliability and Good Performance  
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V  
Collector–Emitter Voltage (RBE = 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A  
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W  
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Emitter–Base Breakdown Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Test Conditions  
Min  
5
Typ Max Unit  
V
I = 1mA, I = 0  
V
V
(BR)EBO  
(BR)CBO  
E
C
V
I = 1mA, I = 0  
75  
75  
C
E
V
I = 10mA, R = 10Ω  
V
(BR)CER  
C
BE  
I
V
= 30V, I = 0  
100  
100  
180  
µA  
µA  
CBO  
CB  
EB  
CE  
CC  
E
Emitter Cutoff Current  
I
V
V
V
= 3V, I = 0  
EBO  
C
DC Forward Current Gain  
Output Power  
h
FE  
= 10V, I = 100mA, Note 1  
35  
6.0  
70  
7.5  
C
P
O
= 12V, P = 250mW, f =  
W
%
in  
27MHz  
Collector Efficiency  
η
55  
60  
C
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.  

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