NTE72

更新时间： 2024-09-17 22:50:55

品牌	Logo	应用领域
NTE		晶体放大器晶体管
页数	文件大小	规格书
2页	28K
描述
Silicon NPN Transistor High Current Amp, Fast Switch

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NTE72 数据手册

NTE72

Silicon NPN Transistor

High Current Amp, Fast Switch

Features:

D High Power: 100W @ T_C= +50°C, V_CE= 40V

D High Voltage: V_CEO= 80V Min

D High Current Saturation Voltage: V_CE(sat)= 1.5V @ 10A

D High Frequency: f_T= 30MHz Min

D Isolated Collector Package, No Isolating hardware Required

Absolute Maximum Ratings: (Note 1)

Collector–Emitter Voltage, V_CES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Emitter Voltage (Note 2), V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Total Power Dissipation (T_C= +50°C, V_CE= 40V), P_T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W

Operating Junction Temperature Range, T_opr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Lead Temperature (During Soldering, 60sec max), T_L. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C

Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may

be impaired.

Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.

Electrical Characteistics: (T_C= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

100

Typ Max Unit

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

DC Pulse Current Gain (Note 3)

I = 200mA, I = 0, Notes 2 & 3

–

CEO(sus)

(BR)CES)

I = 1mA, V = 0

C BE

I = 1mA, I = 0

–

(BR)EBO

I = 100mA, V = 5V

108

–

I = 5A, V = 5V

200

–

I = 5A, V = 5V, T = –55°C

I = 10A, V = 5V

–

Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.

Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.

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