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NTE6407 PDF预览

NTE6407

更新时间: 2024-02-25 03:48:06
品牌 Logo 应用领域
NTE 触发装置二极管双向触发二极管数据判读及分析中心
页数 文件大小 规格书
2页 22K
描述
Bilateral Trigger Diodes (DIACS)

NTE6407 技术参数

生命周期:Active零件包装代码:DO-35
包装说明:LONG FORM, O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:1.35
最大转折电压:32 V最小转折电压:24 V
外壳连接:ISOLATED配置:SINGLE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified重复峰值反向电压:6 V
子类别:DIACs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
触发设备类型:DIACBase Number Matches:1

NTE6407 数据手册

 浏览型号NTE6407的Datasheet PDF文件第2页 
NTE6407, NTE6408,  
NTE6411, NTE6412  
Bilateral Trigger Diodes (DIACS)  
Description:  
The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics  
from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity  
of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating  
of the DIAC.  
Features:  
D Glass–Chip Passivation  
D DO35 Type Trigger Package  
D Wide Voltage Range Selection  
Absolute Maximum Ratings:  
Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF  
Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW  
Derate Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C  
Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W  
Thermal Resistance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W  
Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL . . . . . . . . +230°C  
Note 1. Based on maximum lead temperature of +85°C at 250mW.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Breakover Voltage (Forward and Reverse)  
NTE6407  
V
BO  
24  
28  
35  
56  
28  
32  
40  
63  
32  
36  
45  
70  
V
V
V
V
NTE6408  
NTE6411  
NTE6412  
Breakover Voltage Symmetry  
NTE6407, NTE6408  
V  
Note 2  
2
3
4
V
V
V
BO  
NTE6411  
NTE6412  
Note 2. VBO = [ |+VBO| – |–VBO| ].  

NTE6407 替代型号

型号 品牌 替代类型 描述 数据表
NTE6408 NTE

完全替代

Bilateral Trigger Diodes (DIACS)
MA2B001 PANASONIC

功能相似

Silicon planar type trigger device

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