NTE6402

更新时间： 2024-02-05 02:06:11

品牌	Logo	应用领域
NTE		晶体晶体管可编程单结晶体管
页数	文件大小	规格书
2页	24K
描述
Programmable Unijunction Transistor (PUT)

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NTE6402 数据手册

NTE6402

Programmable Unijunction Transistor (PUT)

Description:

The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic

low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and

cathode.

This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many

advantages over conventional unijunction transistors. The designer can select R₁and R₂to program

unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peak–point emitter

current, and valley–point current to meet his particular needs.

PUT’s are specifically charactrized for long interval timers and other applications requiring low leak-

age and low peak point current. PUT’s similar types have been characterized

Applications:

D SCR Trigger

D Pulse and Timing Circuits

D Oscillators

D Sensing Circuits

D Sweep Circits

Absolute Maximum Ratings: (T_A= +25°C unless otherwise specified)

Gate–Cathode Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V

Gate–Cathode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –5V

Gate–Anode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V

Anode–Cathode Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V

DC Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA

Peak Anode, Recurrent Forward Current

Pulse Width = 100µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Pulse Width = 20µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak Anode, Non–Recurrent Forward Current (10µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA

Capacitive Discharge Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250µJ

Total Average Power (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Operating Ambient Temperature Range (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50° to +100°C

Note 1. Derate currents and powers 1%/°C above 25°C.

Note 2. E = 1/2 CV²capacitor discharge energy with no current limiting.

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与NTE6402相关器件

型号	品牌	获取价格	描述	数据表
NTE6402-9G	NTE	获取价格	Programmable UJT, TO-92,
NTE6403	NTE	获取价格	Integrated Circuit Silicon Bilateral Switch (SBS)
NTE6403-127B	NTE	获取价格	Silicon Bilateral Switch, 10V, TO-98,
NTE6403-9H	NTE	获取价格	暂无描述
NTE6404	NTE	获取价格	Silicon Unilateral Switch (SUS)
NTE6405	ETC	获取价格	SILICON ASYMMETRICAL SWITCH\|14V V(BO) MAX\|80UA I(S)\|TO-92
NTE6407	NTE	获取价格	Bilateral Trigger Diodes (DIACS)
NTE6408	NTE	获取价格	Bilateral Trigger Diodes (DIACS)
NTE6409	NTE	获取价格	Unijunction Transistor
NTE6410	NTE	获取价格	Unijunction Transistor (UJT)

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