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NTE481 PDF预览

NTE481

更新时间: 2024-09-30 15:46:55
品牌 Logo 应用领域
NTE 局域网放大器晶体管
页数 文件大小 规格书
1页 60K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

NTE481 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最大集电极电流 (IC):5 A
集电极-发射极最大电压:16 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:28 W
最大功率耗散 (Abs):28 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NTE481 数据手册

  

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