生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-CRFM-F4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 16 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | O-CRFM-F4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 28 W |
最大功率耗散 (Abs): | 28 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE482 | NTE |
获取价格 |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | |
NTE4828 | NTE |
获取价格 |
Surge Clamping, Transient Overvoltage Suppressor Unidirectional | |
NTE483 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz | |
NTE484 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz | |
NTE4840 | NTE |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 24V V(RWM), Unidirectional, 1 Element, Silicon, | |
NTE485 | NTE |
获取价格 |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | |
NTE4858 | NTE |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, | |
NTE486 | NTE |
获取价格 |
Silicon NPN Transistor RF High Frequency Amplifier | |
NTE4868 | NTE |
获取价格 |
Surge Clamping, Transient Overvoltage Suppressor Unidirectional | |
NTE488 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output |