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NTE480 PDF预览

NTE480

更新时间: 2024-11-01 22:50:55
品牌 Logo 应用领域
NTE 晶体放大器晶体管射频
页数 文件大小 规格书
2页 25K
描述
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

NTE480 数据手册

 浏览型号NTE480的Datasheet PDF文件第2页 
NTE480  
Silicon NPN Transistor  
RF Power Output for Broadband Amp,  
PO = 40W @ 512MHz  
Description:  
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband  
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-  
tors to withstand infinite VSWR under operating conditions.  
Features:  
D Designed for UHF Commercial Equipment  
D 38W with Greater than 5.8dB Gain  
D Withstands 20:1 VSWR Min., All Phase Angles  
D Tuned Q Technology  
D Diffused Emitter Resistors  
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V  
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A  
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W  
Electrical Characteristic: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
Static  
Collector–Emitter Breakdown Voltage  
V
I = 50mA, I = 0, Note 1  
16  
36  
4
5
V
V
(BR)CEO  
C
B
V
I = 15mA, V = 0, Note 1  
C BE  
(BR)CES  
(BR)EBO  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
DC Current Gain  
V
I = 5mA, i = 0  
V
E
C
I
V
= 12.5V, V = 0  
mA  
CES  
CE  
CE  
BE  
h
FE  
V
= 5V, I = 1A  
20  
C
Note 1. Pulsed through 25mH indicator.  

NTE480 替代型号

型号 品牌 替代类型 描述 数据表
2SC2643 TOSHIBA

类似代替

TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
SD1488 STMICROELECTRONICS

类似代替

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
NTE366 NTE

功能相似

Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz

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