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NTE3311 PDF预览

NTE3311

更新时间: 2024-11-01 22:50:55
品牌 Logo 应用领域
NTE 晶体开关晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
2页 22K
描述
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

NTE3311 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.1外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):350 ns
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified最大上升时间(tr):600 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):650 ns标称接通时间 (ton):700 ns
Base Number Matches:1

NTE3311 数据手册

 浏览型号NTE3311的Datasheet PDF文件第2页 
NTE3311  
Insulated Gate Bipolar Transistor  
N–Channel Enhancement Mode,  
High Speed Switch  
Features:  
D High Input Impedance  
D High Speed  
D Low Saturation Voltage  
D Enhancement Mode  
Applications:  
D High Power Switching  
D Motor Control  
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)  
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V  
Collector Current, IC  
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A  
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A  
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Gate Leakage Current  
Collector Cutoff Current  
Collector–Emitter Breakdown Voltage  
Gate–Emitter Cutoff Voltage  
Collector–Emitter Saturation Voltage  
Input Capacitance  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
I
V
V
= ±20V, V = 0  
±500  
1.0  
nA  
mA  
V
GES  
GE  
CE  
I
= 600V, V = 0  
CES  
CE  
GE  
V
I = 2mA, V = 0  
600  
3.0  
(BR)CES  
C
GE  
V
GE(off)  
I = 25mA, V = 5V  
6.0  
4.0  
V
C
CE  
V
I = 25A, V = 15V  
3.0  
1400  
V
CE(sat)  
C
GE  
C
ies  
V
= 10V, V = 0, f = 1MHz  
pF  
µs  
µs  
µs  
µs  
CE  
CC  
GE  
Rise Time  
t
r
0.30 0.60  
0.40 0.80  
0.15 0.35  
0.50 1.00  
V
= 300V  
Turn–On Time  
t
on  
Fall Time  
t
f
Turn–Off Time  
t
off  

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