生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 350 ns |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 600 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 650 ns | 标称接通时间 (ton): | 700 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE3303 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE331 | NTE |
获取价格 |
Silicon Complementary Transistors Audio Power Amp, Switch | |
NTE3310 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE3311 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE3312 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE331MP | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 100V V(BR)CEO | 15A I(C) | TO-220AB | |
NTE332 | NTE |
获取价格 |
Silicon Complementary Transistors Audio Power Amp, Switch | |
NTE3320 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE3321 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |
NTE3322 | NTE |
获取价格 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |