NTE317

更新时间： 2024-11-01 22:50:55

品牌	Logo	应用领域
NTE		晶体晶体管射频
页数	文件大小	规格书
2页	26K
描述
Silicon NPN Transistor RF Power Output

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NTE317 数据手册

NTE317

Silicon NPN Transistor

RF Power Output

Description:

The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-

tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe

operating conditions.

Features:

D 70W Minimum with Greater than 13.5dB Gain

D Withstands Severe Mismatch under Operating Conditions

D Emitter Ballasted

D Low Inductance Stripline Package

Absolute Maximum Ratings:

Collector Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector–Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Maximum Collector Current, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Total Device Dissipation (+25°C), P_T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W

Thermal Resistance, Junction–to–Case, R_thJC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W

Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Electrical Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Breakdown Voltage V_(BR)CEOI_C= 50mA, I_B= 0, Note 1

Collector–Emitter Breakdown Voltage V_(BR)CESI_C= 20mA, V_BE= 0, Note 1

–

Emitter–Base Breakdown Voltage

Collector Cut–Off Current

DC Current Gain

V_(BR)EBOI_E= 5mA, I_C= 0

–

I_CBO

h_FE

f_t

V_CB= 15V, I_E= 0

–

V_CE= 5V, I_C= 5A

200

–

Gain Bandwidth

V_CE= 13.5V, I_C= 100mA

–

MHz

Output Capacitance

C_ob

V_CB= 12.5V, I_C= 0,

–F_O= 1.0MHz

300

Amplifier Power Out

Amplifier Power Gain

P_O

P_g

30MHz/12.5V

–

13.5 14.2

Note 1. Pulsed through 25mH Inductor

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