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NTE300 PDF预览

NTE300

更新时间: 2024-11-04 22:50:55
品牌 Logo 应用领域
NTE 晶体放大器晶体管功率双极晶体管功率放大器局域网
页数 文件大小 规格书
2页 22K
描述
Silicon Complementary Transistors Audio Power Amplifier

NTE300 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:2.16
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):55
JEDEC-95代码:TO-202JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:7 W最大功率耗散 (Abs):7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):65 MHz
Base Number Matches:1

NTE300 数据手册

 浏览型号NTE300的Datasheet PDF文件第2页 
NTE300 (NPN) & NTE307 (PNP)  
Silicon Complementary Transistors  
Audio Power Amplifier  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Collector–Base Breakdown Voltage  
V(BR)CBO IC = 1mA, IE = 0  
50  
40  
5
V
V
Collector–Emitter Breakdown Voltage V(BR)EBO IC = 10mA, RBE =  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
V(BR)EBO IE = 1mA, IC = 0  
V
ICBO  
IEBO  
hFE  
VCB = 25V, IE = 0  
VEB = 5V, IC = 0  
1
µA  
µA  
1
DC Current Gain  
VCE = 4V, IC = 500mA  
55  
300  
1
Collector–Emitter Saturation Voltage  
Base–Emitter Voltage  
VCE(sat) IC = 1A, IB = 50mA  
VBE VCE = 4V, IC = 50mA  
V
V
0.7  

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