生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 2.17 | Is Samacsys: | N |
其他特性: | FAST SWITCHING | 雪崩能效等级(Eas): | 110 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE2987 | NTE |
获取价格 |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2988 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2989 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE299 | NTE |
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Silicon NPN Transistor RF Power Amp, Driver | |
NTE2990 | NTE |
获取价格 |
Transistor, | |
NTE2991 | NTE |
获取价格 |
MOSFET N−Channel, Enhancement Mode High Speed Switch | |
NTE2992 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2993 | NTE |
获取价格 |
MOSFET N−Channel, Enhancement Mode High Speed Switch | |
NTE2994 | NTE |
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Transistor, | |
NTE2995 | NTE |
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Transistor, |