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NTE2986 PDF预览

NTE2986

更新时间: 2024-11-23 22:54:19
品牌 Logo 应用领域
NTE 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
3页 30K
描述
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2986 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.17Is Samacsys:N
其他特性:FAST SWITCHING雪崩能效等级(Eas):110 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTE2986 数据手册

 浏览型号NTE2986的Datasheet PDF文件第2页浏览型号NTE2986的Datasheet PDF文件第3页 
NTE2986  
Logic Level MOSFET  
N–Channel, Enhancement Mode  
High Speed Switch  
Features:  
D Dynamic dv/dt Rating  
D Logic Level Gate Drive  
D RDS(on) Specified at VGS = 4V & 5V  
D +175°C Operating Temperature  
D Fast Switching  
D Ease of Paralleling  
D Simple Drive Requirements  
Absolute Maximum Ratings:  
Drain Current, ID  
Continuous (VGS = 5V)  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A  
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A  
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C  
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V  
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ  
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C  
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C  
Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1 Nm)  
Thermal Resistance:  
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W  
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W  
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W  
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
Note 2. L = 179µH, VDD = 25V, RG = 25, IAS = 51A, Starting TJ = +175°C.  
Note 3. ISD 51A, di/dt 250A/µs, VDD V(BR)DSS, TJ +175°C.  

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