NTE2959

更新时间： 2024-09-09 22:54:19

品牌	Logo	应用领域
NTE		开关
页数	文件大小	规格书
2页	25K
描述
MOSFET N-Channel, Enhancement Mode High Speed Switch

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数据手册

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NTE2959 数据手册

NTE2959

MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Applications:

D SMPS

D DC–DC Converter

D Battery Charger

D Power Supply of Printer

D Copier

D HDD, FDD, TV, VCR

D Personal Computer

Absolute Maximum Ratings: (T_C= +25°C unless otherwise specified)

Drain–Source Voltage (V_GS= 0V), V_DSS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

Gate–Source Voltage (V_DS= 0V), V_GS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V

Drain Current, I_D

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Maximum Power Dissipation, P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W

Channel Temperature Range, T_ch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Channel–to–Case, R_th(ch–c). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.17°C/W

Isolation Voltage, V_ISO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

Electrical Characteristics: (T_ch= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Drain–Source Breakdown Voltage

Gate–Source Breakdown Voltage

Gate–Source Leakage

= 0V, I = 1mA

900

±30

–

(BR)DSS

= 0V, I = ±100µA

(BR)GSS

= ±25V, V = 0V

–

±10

1.0

4.0

µA

GSS

Zero Gate Voltage Drain Current

Gate Threshold Voltage

= 900V, V = 0

–

DSS

= 10V, I = 1mA

2.0

–

3.0

GS(th)

Static Drain–Source ON Resistance

Drain–Source On–State Voltage

Forward Transfer Admittance

= 10V, I = 2A

2.15 2.80

Ω

DS(on)

= 10V, I = 2A

–

4.3

5.0

5.6

–

DS(on)

|y |

= 10V, I = 2A

3.0

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