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NTE2923 PDF预览

NTE2923

更新时间: 2024-09-09 22:49:51
品牌 Logo 应用领域
NTE 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
3页 32K
描述
MOSFET N-Ch, Enhancement Mode High Speed Switch

NTE2923 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.12Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):480 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):8.8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):35 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTE2923 数据手册

 浏览型号NTE2923的Datasheet PDF文件第2页浏览型号NTE2923的Datasheet PDF文件第3页 
NTE2923  
MOSFET  
N–Ch, Enhancement Mode  
High Speed Switch  
Features:  
D Dynamic dv/dt Rating  
D Repetitive Avalanche Rated  
D Isolated Central Mounting Hole  
D Fast Switching  
D Ease of Paralleling  
D Simple Drive Requirements  
Absolute Maximum Ratings:  
Continuous Drain Current (VGS = 10V), ID  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8A  
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A  
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A  
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W  
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C  
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20  
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ  
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8A  
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ  
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C  
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W  
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24°C/W  
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.  
Note 2. VDD = 50V, starting TJ = +25°C, L = 11mH, RG = 25, IAS = 8.8A  
Note 3. ISD 8.8A, di/dt 100A/µs, VDD 500V, TJ +150°C  
Note 4. Pules Width 300µs, Duty Cycle 2%.  

NTE2923 替代型号

型号 品牌 替代类型 描述 数据表
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