生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 2.12 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 480 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 8.8 A |
最大漏源导通电阻: | 0.85 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 35 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTP8N50P | IXYS |
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IXTA8N50P | IXYS |
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2SK3521-01S | FUJI |
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N-CHANNEL SILICON POWER MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE2924 | NTE |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | |
NTE292MCP | ETC |
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TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 120V V(BR)CEO | 4A I(C) | TO-220AB | |
NTE293 | NTE |
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NTE2930 | NTE |
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NTE2931 | NTE |
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NTE2932 | NTE |
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NTE2933 | NTE |
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MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2934 | NTE |
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MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2935 | NTE |
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MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2936 | NTE |
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MOSFET N-Channel, Enhancement Mode High Speed Switch |