生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 2.15 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 390 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 64 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE2923 | NTE |
获取价格 |
MOSFET N-Ch, Enhancement Mode High Speed Switch | |
NTE2924 | NTE |
获取价格 |
MOSFET N-Ch, Enhancement Mode High Speed Switch | |
NTE292MCP | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 120V V(BR)CEO | 4A I(C) | TO-220AB | |
NTE293 | NTE |
获取价格 |
Silicon Complementary Transistors Audio Amplifier and Driver | |
NTE2930 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2931 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2932 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2933 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2934 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch | |
NTE2935 | NTE |
获取价格 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |