NTE2902

更新时间： 2024-11-02 04:00:15

品牌	Logo	应用领域
NTE		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	55K
描述
N-Channel Silicon Junction Field Effect Transistor

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技术参数
数据手册

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NTE2902 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	1.99
Base Number Matches：	1

NTE2902 数据手册

NTE2902

N-Channel Silicon Junction

Field Effect Transistor

Description:

The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier

applications.

Absolute Maximum Ratings: (Note 1)

Drain-Source Voltage, V_DS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Gate-Source Voltage, V_GS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Forward Gate Current, I_GF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA

Total Device Dissipation (T_A= +25°C), P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW

Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C

Operating Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C

Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings

applied to the device are individual stress values (not normal operating conditions) and are not

valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

Electrical Characteristics: (T_A= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

Symbol

Test Conditions

Min Typ Max

Unit

V_(BR)GSSI_G= 1.0μA, V_DS= 0

-25

μA

I_GSS

T_A= +25°C

T_A= +125°C

-1.0

-6.5

V_GS= 15V,

V_DS= 0

Gate-Source Cutoff Voltage

ON Characteristics

V_GS(off)V_DS= 10V, I_D= 1nA

-2.0

Zero-Gate Voltage Drain Current

Gate-Source Forward Voltage

I_DSS

V_DS= 10V, V_GS= 0, Note 2 24

V_GS(f)V_DS= 0, I_G= 1mA

1.0

Note 2. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3%.

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