NTE2673 (NPN) & NTE2674 (PNP)
Silicon Complementary Transistors
General Purpose Power
TO220FP Type Package
Features:
D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Collector Power Dissipation (TC = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Note 1. Single pulse: Pulse Width = 10ms.
Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V
I = 50μA
60
50
5
−
−
−
−
−
−
−
−
1
1
V
V
(BR)CBO
C
V
I = 1mA
C
(BR)CEO
V
I = 50μA
E
V
(BR)EBO
I
V
V
= 40V
= 4V
−
μA
μA
V
CBO
CE
Emitter Cutoff Current
I
−
EBO
EB
Collector−Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
V
I = 2A, I = 200mA, Note 3
−
0.5 1.0
CE(sat)
C
B
h
FE
I = 500mA, V = 3V, Note 3
C
60
−
−
320
−
CE
f
T
I = -500mA, V = 5V, f = 30MHz, Note 3
E CE
90
40
MHz
pF
Output Capacitance
C
ob
V
CB
= 10V, I = 0A, f = 1MHz
test
−
−
E
Note 3. Measured using pulse current.