NTE2662

更新时间： 2024-11-02 04:00:19

品牌	Logo	应用领域
NTE		晶体晶体管
页数	文件大小	规格书
2页	79K
描述
Silicon NPN Transistor High Frequency, Low Noise RF

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NTE2662 数据手册

NTE2662

Silicon NPN Transistor

High Frequency, Low Noise RF

Description:

The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os-

cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high

immunity to pushing effects.

Features:

D New Miniature Surface Mount Package

− Small Transistor Footprint

− 1.0mm x 0.5mm x 0.5mm

− Low Profile / 0.50mm Package Height

− Flat Lead Style for Better RF Performance

D Ideal for ≤ 3GHz Oscillators

D Low Phase Noise

D Low Pushing Factor

Absolute Maximum Ratings: (T_A= +25°C, Note 1 unless otherwise specified)

Collector−to−Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V

Collector−to−Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V

Emitter−to−Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V

Collector Current, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Total Power Dissipation (Note 2), P_T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140mW

Operating Junction Temperature, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C

Note 1. Operation in excess of any one of these parameters may result in permanent damage.

Note 2. With device mounted on 1.8cm²x 1.0mm glass epoxy board.

Electrical Characteristics: (T_A= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gain Bandwidth

f_T

V_CE= 1V, f = 2GHz

I_C= 5mA

I_C= 15mA 5.0

I_C= 5mA 3.0

I_C= 15mA 4.5

3.0

4.5

6.5

4.0

5.5

−

GHz

Insertion Power Gain

|S_21E|

V_CE= 1V, f = 2GHz,

Note 3

Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%.

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